To lodge a hydrogenated nanocrystalline three-dimensional Si carbide ( nc-3C-SiC: H ) movie onto Si substrate at low temperature.

To qualify the deposited movie in footings of their construction, chemical composing, surface morphology, and optical belongingss.


Scope of this survey is:

Survey of the nc-3C-SiC: H movie and HMCVD method.

We Will Write a Custom Essay Specifically
For You For Only $13.90/page!

order now

Design and building the equipment of the hot mesh chemical vapor deposition ( HM-CVD ) system.

Escape and warming testing for the HM-CVD system.

Evaluation of H atom denseness on a tungsten mesh surface.

Growth a hydrogenated nanocrystalline three-dimensional Si carbide ( nc-3C-SiC: H ) movie onto Si substrate at low temperature.

Characterize of the nc-3C-SiC: H movie on Si Substrate.


The importance of this survey on the undertaking is:

HM-CVD method is a simple method to growing nc-3C-SiC: H movie on Si substrate compared PECVD and MBE method.

Can be developed to growing nc-3C-SiC: H movie on Si substrate in the big country deposition.

Can be used to growing nc-3C-SiC: H movie on Si substrate at low temperature.

Can be generated a high denseness H extremist by catalytic reaction on the hot mesh wolfram wire surface.

Can be developed nc-3C-SiC: H movie on Si substrate for high temperature and high power devices.


In recent old ages at that place has been increasing involvement and research into silicon carbide ( SiC ) as a semiconducting material for usage in high temperature, high power and high runing status under which the Si and the III-V semiconducting materials. The growing of the SiC movie on Si substrate are normally prepared by the atmospheric force per unit area chemical vapour deposition ( APCVD ) , low force per unit area CVD or plasma enhance CVD method. The job for that method reference above is diffusion limited instead than surface controlled, there is concern of the influence of plasma harm, the high temperature are normally required for fiction and the high denseness extremist H can non be easy produced. The hot mesh chemical vapor deposition ( HMCVD ) method was developed to get the better of these job because that technique is one of the most method for growing nc-3C-SiC: H movie on Si substrate at low temperature and big country deposition of functional thin movie. In this survey will be design and building of the HMCVD setup to growing nc-3C-SiC: H movie on Si substrate.

The HMCVD method is low cost setup, low temperature deposition, low harm deposition and high extremist H generated. Furthermore, successful results of this research may open an avenue for the usage of SiC movies for many intents, including the high temperature and high power devices, solar cells, hetero bipolar transistor, piezoresistive detector and MEMS application.


Introduction of the Silicon Carbide ( SiC )

Materials engineering in the following hereafter, humanistic disciplines strife to further miniaturise, accelerated and hasten the practical word grows progressively stronger, where in the new millenary the stuffs supposed to go bigger, better and faster operation so the stuffs old will no longer suffice. Silicon carbide ( SiC ) , a difficult dense synthetically produced compound of Si and C atom, has been the focal point stuff for the hereafter of many industrial application. The alone belongingss such as big energy set spread ( 2.2 electron volt ) , a high saturated impetus speed ( 2.7 x 107 cm s-1 ) , big breakdown field ( 5 x 106 V cm-1 ) , high thermic conduction ( 5 Wcm-1 K-1 ) and good chemical stableness its possible usage in high-power, high-frequency and high-temperature devices [ 1 ] . These belongingss are besides good suited for usage some devices such as a window bed of solar cell [ 2 ] , high current addition heterojunction bipolar transistors ( HBTs ) [ 1 ] and microelectromechanical system ( MEMS ) [ 3 ] .

SiC exists as a big household of crystals known as polytypes, which the difference between the polytypes is the stacking order between wining dual beds of C and Si atoms. All polytypes have a hexangular frame with a C atom situated above the Centre of trigon of Si atoms and underneath a Si atom belonging to the following bed ( Figure 1 ) . They are named harmonizing to their construction ( i.e. three-dimensional, hexangular, etc… ) and the cyclicity of repeat the atomic bed. For illustration the 3C polytype ( which is the lone three-dimensional signifier of SiC ) has a three-dimensional construction and the same agreement repetitions every 3 beds. Table 1, shows some other common SiC polytypes. The most common cubic and hexangular SiC lattice constructions and their stacking forms are shown in Figure 2 [ 4 ] .

Figure 1. The tetragonal bonding of a C atom with close Si neighbor

Table 1. Common SiC polytypes

Ramsdell notation

ABC notation









Figure 2. The stacking sequence of the most common SiC polytypes

SiC deposited in the signifier of thin movie is reasonably recent and extremely researched engineering. The scope of work includes crystalline SiC thin movies created at high temperature and low force per unit areas to formless SiC at low temperature and high force per unit area. Many deposition techniques exist, with the most common being chemical vapor deposition ( or some signifier of it ) and physical vapor deposition. Applications of the SiC movie are chiefly geared towards the microelectronic and semiconducting material industries.

Much of the work done to day of the month has used corning 1737 glass, vitreous silica and Si as the substrate stuffs. The purpose of the present work is to make hydrogenated nanocrystalline three-dimensional SiC ( nc-3C-SiC: H ) thin movie at low temperature utilizing hot mesh chemical vapor deposition method and to analyze the stuff belongingss of such movie. The SiC movies were deposited onto Si substrate with changing deposition clip, filament temperature, and distance between substrate and the mesh wolfram wire. These parametric quantities were optimized to make the best movies.

CVD method for Silicon Carbide thin movie

Ohno et. Al. [ 5 ] have prepared 4H-SiC individual crystal by hot wall type CVD method utilizing Silane ( SiH4 ) and propane ( C3H8 ) for beginning gases with a H2 bearer gas. The catalytic CVD technique for readying b-SiC thin movie has been reported by Zhao et Al. [ 6 ] , where nanocrystalline b-SiC thin movies were epitaxally grown on Si ( 100 ) substrate utilizing SiH4, CH4 and H2 gas. The tungsten wire fibril was fixed at 2000A°C and substrate temperature was 300A°C. Thereafter, the deposition clip to growing the annocrystalline b-SiC thin movie was controlled for 110 proceedingss.

Miyajima et Al. [ 7 ] have successfully deposited Aµc-3C-SiC: H movies from a mixture of monomethylsilane ( SiH3CH3 ) and H ( H2 ) . The deposition was performed in a hot wire CVD ( HWCVD ) at low temperature and a force per unit area was kept changeless at 100 Pa. The filament temperature is 1400A°C by DC current. The flow rate gas of H2 was kept changeless at 200 sccm and SiH3CH3 flow rate was 0.8 – 1.6 sccm. The survey confirmed that the influence H dilution ratio on movie belongingss. It was found that the movie deposited with low H dilution ratio had a lower defect denseness than the movie deposited with high H dilution ratio. These consequence suggested that high-quality Aµc-3C-SiC: H movies can be obtained under the low H dilution status.

Polycrystalline 3C-SiC movies deposited from a mixture of silane and propane as procursors and H as bearer gas were investigated by Ricciardi et Al. [ 8 ] . The movies were deposited utilizing the extremist high vacuity cold wall perpendicular ( LPCVD ) reactor onto Si substrate at force per unit area was 10 Torr and the temperature 1000A°C. The H2 gas flow rate was 1200 sccm. The presence oriented constructions in the SiC movies were checked by Selected Area negatron diffraction ( SAD ) patterns. It was observed that the major growing waies were in the ( 110 ) oriented planes.

Tabata et Al. [ 9 ] conducted a survey belongingss of nanocrystalline three-dimensional Si carbide thin movies on corning 1737 glass substrate for usage in the thin movie solar cells. They used hot wire CVD ( HWCVD ) method with SiH4, CH4 and H2 gases. Before the deposition, the wolfram wire was heated at 2000A°C in H2 atmosphere to extinguish O. During deposition the filament temperature was kept at 1800A°C and the substrate temperature was varied between 104 and 434A°C. The XRD forms of the nc-3C-SiC thin movie was observed that the major growing way were in the ( 111 ) , ( 220 ) and ( 311 ) planes. These happening indicates that nc-3C-SiC: Hydrogen grew at substrate temperature above 187A°C. On the other manus, for the substrate temperature lower than 187A°C ( Ts = 104A°C ) , no XRD peak attributed to nc-3C-SiC: H was observed, bespeaking that the formless.

Crystalline SiC movies deposited by monomethylsilane as a beginning gas and H as bearer gas utilizing hot mesh chemical vapor deposition ( HMCVD ) method were studied by Yasui et Al. [ 10 ] and Narita et Al. [ 3 ] . The chief focal point survey from that research worker was to growing the SiC thin movie with low temperature deposition and developed the HMCVD to be effectual method to growing SiC movie. Two method of deposition were used, they are PECVD and HMCVD method with a monomethylsilane and H gases. They are reported that the HMCVD method was really effectual for SiC growing on Si substrate at low temperature.

Hot Mesh Chemical Vapour Deposition Method ( HMCVD )

The catalytic chemical vapour deposition ( cat-CVD ) or hot wire CVD ( HWCVD ) or hot mesh CVD ( HMCVD ) is included in the cold wall reactor and that is the same manner to crate the extremist H generated. HMCVD method is one of the promising techniques for the low temperature composing and big country deposition of functional thin movie. The HMCVD setup consists of three parts: 1 ) the portion for gas recess into the low force per unit area deposition chamber, 2 ) the portion for gas decomposition via catalytic checking reaction at the surface of a het catalyzer, and 3 ) the substrates for movie formation utilizing decomposed species transported from the catalyzer [ 11 ] .

The benefit of the HMCVD method is its high gas decomposition efficiency and a simple method compared with molecular beam epitaxial and plasma enhance chemical vapour deposition method. An easy creative activity of H extremist coevals with high concentration and no ion harm during a checking reaction procedure. An easy applicable to deposition on big country substrate compared with MBE method. Scaling to big countries simply requires an addition in catalytic surface along with a proportionately larger supply of beginning gases. Substrate can be easy be handled as they do non hold a function in the decomposition procedure. Step coverage is first-class, and uniformity can easy be optimized as substrates can be moved during deposition.

The catalytic CVD method was developed by Weismann et. Al. in 1979 [ 11 ] to get the better of the job arising in the PCVD procedures. They are reported that Si thin movies could be formed by checking silane gas with a het wolfram or C fibril. However, their effort was non successful because the photoconduction and the radiosensitivity of their a-Si movies were much worse than those obtained by PCVD at that clip. In 1985, Weismann and his group succeeded in obtaining an first-class quality of hydrofluorinated a-Si ( a-SiF: Hydrogen ) by blending intermediate species, Si difluoride ( SiF2 ) with atomic H generated by catalytic reaction of H gas with a het tungsten catalyzer placed near the substrate. These successful consequences appeared to promote some research worker to get down similar survey utilizing that method with other stuffs. Conceptual on catalytic reaction or checking reactions in W-mesh can be shown in the Figure 3.

Figure 3. A Conceptual of checking reaction of HMCVD procedure.

From the Figure 3, can be seen a H molecule is dissociatively adsorbed on the surface of wolfram ( W ) wire at high temperature, the reaction on the surface goes on and major decomposition constellation becomes H extremist ( H* is hydrogen active ) . The precursor gas in this survey was used monomethylsilane ( MMS ) . The MMS gas was supplied straight onto the substrate surface with the temperature of the substrate was lower than mesh wire temperature. The MMS gas will be adsorb on the Si substrate to do a SiC bond. In the procedure of the SiC movie, they are have three type of bonding, i.e. C-H bond ( strong bond ) , Si-C ( in-between bond ) and Si-H ( weak bond ) . Hydrogen on the Si-H bond will be adsorb of the Si substrate where it is heating a certain temperature. When the H was adsorb so the suspension bond will be occurred in the substrate surface. The H group from the decomposition procedure on the tungsten mesh wire will be alter the suspension bond.

In this instance, when a MMS gas corsets for a long period by doing a bond with a tungsten active site, W-silicide will be stars to turn. The silicide is turning on the W mesh and eventually the catalyzer is broken. However, when the W temperature is higher than a certain temperature, W-silicide non be occur. Matsumura et. Al. [ 12 ] , reported the W-silicide can be avoided when the W temperature is higher than 1600A°C.

The deposition mechanism has been extensively studied and assorted application have been attempted to research new field. The sort of movies prepared by this technique is spread outing. Amorphous Si ( a-Si ) [ 13,14 ] , formless Si carbide ( a-SiC ) [ 15,16 ] , formless C [ 17 ] , Si nitride ( SiNx ) [ 18 ] , Silicon dioxide ( SiO2 ) [ 19 ] , Aluminum oxide ( Al2O3 ) [ 20 ] , Ga nitrid ( GaN ) [ 21-25 ] , polycrystalline Si ( poly-Si ) [ 26 ] , C doped silicon oxide ( Si-O-C ) [ 27 ] , C doped silicon nitride ( Si-N-C ) [ 27 ] , diamond [ 28,29 ] , C nanotube [ 30 ] , C nanowall [ 31,32 ] , C nano atom [ 30 ] , poly-tetra-fluoro-ethylene ( PTFE ) and poly-glycidyl-methacrylate ( PGMA ) [ 33 ] , nanocrystalline three-dimensional Si carbide ( nc-3C-SiC: H ) [ 34,35 ] , Titanium oxide ( TiO2 ) [ 36 ] , and SiC on Insulator ( SiCOI ) [ 37 ] . The illustration of application of cat-CVD engineering, reported so far, are summarized in Table 2 [ 38 ] and the current engineerings utilizing SiC thin movies are shown in Table 3.

Table 2. Examples of application of cat-CVD engineering


Partss applied

Features of cat -CVD


GaAs or GaN devices

Organic devices


Solar cells

Chemical stuffs


Mechanical constituent

Synthesis of organic compounds

Bio- and medical constituent

Extremist beginnings

Gate side wall

Trench dielectric

Gate dielectric

Surface passivation

Gas -barrier movies

Coating of CNT TFT


Coat of glass or organic substrate

Photo receptor of duplicator

a-Si solar cells

a-Si for HIT solar cells

Anti contemplation coating

Gas barrier for nutrient rapping

Surface coating

Surface alteration of fibres

Polytetrafluoroethylene coating

Surface coating, alternate to electro deposition

Organic synthesis by selected species

Surface passivation

Photo- resist remotion by H

Surface alteration

Good measure coverage

Low H contents

High electric resistance

Low emphasis

Low harm

High gas barrier ability

Low emphasis

Low deposition temperature

High efficiency of gas usage

High rate deposition

Low cost setup

Highly photo conductive a-Si

High efficiency of gas usage

Low exposure debasement

Low harm deposition

High gas barrier ability

Low emphasis

Low clash

Low temperature deposition

Water resistive movies

Low clash movies

High rate deposition

High gas barrier ability

Free from electric discharge

Low temperature deposition

Low harm deposition

Low temperature deposition

Low harm deposition

Formation of low emphasis movies

Coevals of high denseness H atoms and extremist

Table 3. SiC thin movies belongingss and current typical application

SiC thin movie

belongings class

Current application


Wear Resistance


High stiffness and high thermic stableness mirrors used for land based and infinite based telescopes and directed energy application

Coating for noses and seals etc… where a long life and low wear rate are necessary. Can be up to 3 to 6 times longer enduring than conventional sintered SiC.

High temperature MOSFET

High temperature Power Thyristor

Low kdielectric stuffs











































Literature Review of nc-3C-SiC: H, and HMCVD system

Design reactor chamber and fix HMCVD vacuity system

Installation of chamber reactor and vacuity system

Escape and warming testing ( ULVAC company )

Installation of a HMCVD system ( Ibnu Sina Institute Laboratory )

Growth and fiction of nc-3C-SiC: Hydrogen by utilizing HMCVD system

Word picture of the nc-3C-SiC: H movie sample

Analysis and optimation parametric quantity

Concluding Report ( Writing )

Submitted to SPS



Design Reactor chamber and building of HMCVD system

In this survey, the HMCVD system will be designed and constructed in our research lab ( Nanostructures and Nanophysics Laboratory, IIS, UTM ) . The schematic of HMCVD system can be shown in Figure 4.

Figure 4. A conventional of HMCVD system

Research Material and Equipment

In this research was used some stuffs such as beginning gas, substrate, and W-mesh wire. Source gas was used in here is monomethylsilane, H and N gas. The equipment to growing of the nc-3C-SiC: H movie by utilizing HMCVD system.

Fabrication Procedure


The measure of the pre-treatment procedure in this survey is cutting and cleaning procedure. In the film editing procedure, the Si ( Si ) wafer will be cuted utilizing diamond scratch awl for obtaining 15 ten 15 mm size substrate sample. Furthermore, in the cleansing procedure, the portion of the Si wafer is an supersonic submergence of the methyl alcohol, propanone, and HF solution. Each of the supersonic submergence takes up to 5 proceedingss and rinsing in de-ionized H2O for 2 minute. The last measure in the cleansing procedure is blow prohibitionists Si wafer with nitrogen air before insert to the chamber reactor. This procedure is needed to do certain the Si wafer is clean plenty and free of any atoms for the undermentioned procedure.

Deposition Process ( Growth sample )

In this survey, we will seek to growing the nc-3C-SiC: H thin movie sample on Si substrate utilizing HMCVD method. The deposition parametric quantity will be varied in order to happen the optimal status in which a good quality sample to nanoelectronics devices.

Research Activities

The flow chart of the research methodological analysis is proposed every bit shown as in Figure 5.

Figure 5. Research methodological analysis flow chart

Word picture of the hydrogenated nanocrystalline three-dimensional Si carbide ( nc-3C-SiC: Hydrogen )

Sic stuffs in nanometer graduated table have been studied over many old ages and many physical, chemical and thermic belongingss related to the nanometre size have been reported. One of the critical challenges faced presently by research worker in the nanotechnology and nanoscience field is the inability and the deficiency of the instruments to detect, step, and pull strings the stuffs at the nanometer degree by attesting at the microscopic degree. In the yesteryear, the surveies have been focused chiefly on the corporate behavior and belongingss of the big figure of nanostructure stuffs. The belongingss and behaviors observed and measured are typically group features [ 39 ] .

A better cardinal apprehension and assorted possible applications progressively demand the ability and instrumentality to detect step and pull strings the single nanomaterials and nanostructures. Word pictures of single nanostructure require utmost sensitiveness, utmost truth, and atomic degree declaration. Assorted microscopies will play a cardinal function in word picture and measurings of nanostructures stuffs.

X-ray Diffraction ( XRD )

XRD is a really of import experiment technique that has long used to turn to all issue related to the crystal construction of solid, including lattice constans and geometry, designation of unknown stuffs, orientation of individual crystals, preferable orientation of polycrystals, defect, emphasiss, etc.

The vitreous province was determined by X-ray diffraction ( XRD ) analysis to conform the sample is crystal or formless. A comparatively all right pulverization is placed on the aluminum holder and the XRD analysis was done utilizing Philips Analytical X-Ray Diffractometer with CuKI± radiation and I» = 1.5408C? . The 2I? scan from 10° to 70° , at the measure of 0.050° and clip per measure was 0.5s for all the samples. The non being of any extremums would verify that the sample is in the formless province.

Fourier Transform Infrared ( FTIR ) Spectroscopy

The composing, sort of chemical bond and atomic agreement that are present in sample can be determined utilizing FTIR spectrometry. Infrared spectrometry in the system 2000R NIR FT-Raman is by utilizing Michelson interferometer method ( Perkin Elmer, 2000 ) . The spectrometer beginning for these system is tungsten halogen with envelop vitreous silica and the sensor is by utilizing InSb. The spectrum can be obtained from the interferogram with fourier transmutation.

The samples were placed in the spectrometer and a scan as obtained for radiation at wave figure ( thousand = 2Iˆ/I» ) in the spectral scope of 400 – 4000 cm-1 and were run at the declaration of 2 cm-1. The spectrum of the glass can be obtained with minus the infrared spectrum sample with substrate and the background spectrum ( wave figure = reciprocal of wavelength, normally expressed in cm-1 ) .

Raman Dispersing

Raman dispersing experiments have been performed at right-angle geometry utilizing a NIR FT-Raman Pelkin Elmer Spectrometer of an Neodymium: YAG optical maser with mW aoutput power. The NIR FT-Raman instrument used InGaAs sensors which is sensitive at the close infrared. The working scope of the system at room temperature was 3600 -150 cm-1 Raman Shift.

A uninterrupted moving ridge ( CW ) optical maser was fired into the sample. The sample scatters the incident radiation elastically ( Rayleigh dispersing ) and inelastically ( Raman dispersing ) in all waies. Figure 3 shows a conventional ocular diagram. In the agreement scattered radiation is collected in a way 180A° to the incident optical maser beam. The scattered radiation was collected by the lens system, focused onto the J-stop, and so into the modulator of the FT-instrument.

Figure 6. A conventional optical diagram of NIR FT-Raman spectrometer

It is necessary to take the intense Rayleigh sprinkling that occurs at the wavenumber of the exciting optical maser. This was done utilizing a set of optical filters placed throughout the beampath before sensor NIR FT-Raman spectrometer are diffusing systems that use grates and slits and can avoid saturating the sensor with Rayleigh scattered light by merely non scanning at the wavenumber of the optical maser.

UV-Vis Spectroscopy

Study of optical soaking up and peculiarly the soaking up border is utile method to look into optically bring on passages and to obtain information about the set constructions and energy spread ( Eg ) of both crystalline and noncrystalline stuffs. The rule behind this technique is that a photon with energies greater than set spread energy will be absorbed. There are two sorts of optical passage at the cardinal soaking up border of crystalline and non-crystalline stuffs, viz. direct and indirect passages. Both involve interaction of an electronic moving ridge with an negatron in the valency set ( VB ) , which is raised across the cardinal spread to the conductivity set ( CB ) . Indirect passage besides involve coincident interactions with lattice quivers ; therefore the moving ridge vector of the negatron can alter in the optical passages, with the impulse alteration being taken or given up by phonons. If the excitement formation or electron-hole interaction is neglected, the signifier of the I± as a map of N’I‰ depend on the type of energy sets incorporating the initial and concluding province. In many crystalline and noncrystalline semiconducting materials, the I±I‰ depends exponentially on the N’I‰ . This exponential dependance, known as the urbach regulation, can be written in the signifier:

I± ( I‰ ) = B exp ( 1 )

where B is a changeless and I”I• is the breadth of the set dress suits of the localised provinces known as Urbach energy. In general both direct and indirect passage can happen in crystalline stuff. The smallest spread leads to direct passage. The indirect passage is associated with a smaller I± . Mott and Davis ( 1971 ) [ 40 ] suggested the undermentioned look for direct passages:

I± ( I‰ ) N›I‰ = B ( N›I‰-Eopt ) N ( 2 )

where n = A? or 3/2, depending on whether the passage is allowed or forbidden, B is a changeless, and for indirect passages, n = 2 for allowed passage and n = 3 for out passage.

UV-Visible transmittal the sample at room temperature was measured utilizing a Shimadzu 3101 personal computer UV-VIS NIR spectrophotometer. This system utilizing halogen lamp ( 340 & lt ; I» & lt ; 2500 nanometer ) for pumping beginning at scanning increment 0.2 nanometer. The optical density signal was analyzed utilizing dual monochromatic diffraction grating system and photomultiplier R-928 sensor with declaration about 0.1nm ( Shimadzu,1997 ) . For the measuring, the glass samples need to be polished and land to a thickness scope 2-5 millimeter.

Transmission Electron Microscopy ( TEM )

The transmittal negatron microscopy ( TEM ) is used to place imperfectness in the atomic degree constructions of stuffs by analysis of microscopic surfaces. The rule of TEM can be seen in Figure 7. A really thin piece of the stuff to be tested is exposed to a beam of negatrons. When the negatrons interact with consistent stuff construction, a changeless fraction of negatrons is transmitted back from the sample to a sensor. Once a structural imperfectness is encountered, the fraction of familial negatrons alterations. Two common methods of TEM microstructural imaging reveal of import information about the stuff being tested. Diffraction contrast is utile in placing big constructions and crystallographic characteristics. Phase contrast is used for high magnification imagination of atomic columns.

A cross-sectional bright field image of the SiC thin movie will be obtained utilizing a JEM-2100 Electron microscope ( JEOL ) . The JEM-2100 electron microscope is a holding the maximal capablenesss of ultra-high declaration, high image quality, easy operation and stableness public presentation. Assorted optional fond regards such as STEM image, an EDS, and an EELS. JEM-2100 used a individual crystal LaB6 fibril as the beginning of negatron, which breathing negatron when heated in the vacuity. This instrument can be operated at high electromotive force ( up to 200kV ) and gave a spacial declaration of 0.194 nanometers.

Figure 7. Principle of the Transmission Electron Microscopy


Design of HMCVD system

The schematic of HMCVD system is shown in Figure 8 and Appendix 1.


The end product expected of this undertaking is obtained the nc-3C-SiC: H movie by utilizing HMCVD system as consequence from our design and concept in our research lab. The optimum of growing parametric quantity such as gas flow rate, force per unit area, substrate temperature, W-mesh temperature, distance between substrate and W-mesh will used during nc-3C-SiC: H fiction procedure. Furthermore, from the word picture procedure will be obtained the nc-3C-SiC: H movie belongingss are applicable for high temperature, high power and high frequence devices.

Future Works

Consequently the research methodological analysis as shown on flow chart, the working of the research will be continued on the assembly the HMCVD system for fiction of nc-3C-SiC: H movie, growing of ego assembled nc-3C-SiC: H, characterize of the sample and analysis the information. The last work is making composing for the paper and thesis completed.


This research undertaking is consist of design and concept the HMCVD system for growing nc-3C-SiC: H movie. The HMCVD system has been done designed. The building of HMCVD system is in advancement. HMCVD system will be used for fiction the nc-3C-SiC: Hydrogen for applied in high temperature, high power and high frequence devices.


[ 1 ] Hwang, J.D. Fang, Y.K. Song, Y.J. Yaung, D.N. 1996. “ High Mobility b-SiC Epilayer Prepared by Low-Pressure Rapid Thermal Chemical Vapor Deposition on a ( 100 ) Silicon Substrate. Thin Solid Films. 272: 4-6.

[ 2 ] Komura, Y. Tabata, A. Narita, T. Kanaya, M. Kondo, A. Mizutani, T. 2007. “ Film Properties of nanocrystalline 3C-SiC Thin Films Deposited on Glass Substrtaes by Hot-Wire Chemical vapour Deposition utilizing CH4 as a Carbon Source ” . Jpn. J. Appl. Phys. 46: 45-50.

[ 3 ] Narita, Y. Yasui, K. Eto, J. Kurimoto, T. Akahane, T. 2005. “ ( 100 ) -Oriented 3C-SiC Polycrystalline Film Grown on SiO2 by Hot-Mesh Chemical Vapor Deposition Using Monomethylsilane and Hydrogen ” . Jpn. J. Apll. Phys. 44: L809-L811.

[ 4 ] Daulton, T.L. Bernatowicz, T.J. Lewis, R.S. Messenger, S. Stadermann, F.J. Amari, S. 2003. “ Polytype Distribution of circumtellar Silicon carbide: Microstructural Word picture by Transmission Electron Microscopy ” . Geochimica et Cosmochimica Acta. 67: 4743-4767.

[ 5 ] Ohno, T. Yamaguchi, Kuroda, S. Kojima, K. Suzuki, T. Arai, K. 23004. “ Direct Observation of Dislocations Propagated from 4H-SiC Substrate to Epitaxial Layer by X-ray Topography ” . J. Crystal Growth. 260: 209-216.

[ 6 ] Zhao, Q. Li, J.C. Zhou, H. Wang, H. Wang, B. Yan, H. 2004. “ Parameters Determining Crystallinity in b-SiC Thin Films Prepared by Catalytic Chemical Vapor Deposition. J. Crystal Growth. 260: 176-180.

[ 7 ] Miyajima, S. Yamada, A. Konagai, M. 2004. “ Properties of Hydrogenated Microcrystalline Cubic Si Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low substrate Temperature ” . Jpn. J. Appl. Phys. 43: L1190-L1192.

[ 8 ] Ricciardi, C. Giorgis, F. Fanchini, G. Musso, S. Ballarini, V. Bennici, E. Barucca, G. Rossi, A.M. 2005. “ Microstructure analysis on polycrystalline 3C-SiC Thin Films ” . Diamond & A ; Related Materials. 14: 1134-1137.

[ 9 ] Tabata, A. Komura, Y. Hoshide, Y. Narita, T. Kondo, A. 2008. “ Properties of Nanocrystalline Cubic Silicon carbide Thin Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH4/CH4/H2 at Various Substrate Temperature ” . Jpn. J. Appl. Phys. 44: 561-565

[ 10 ] Yasui, K. Eto, J. Narita, Y. Takata, M. Akahane, T. 2005. “ Low-Temperature Heteroepitaxial Growth of SiC on ( 100 ) Si Using Hot-Mesh Chemical Vapor Deposition ” . Jpn. J. Appl. Phys. 44: 1361-1364.

[ 11 ] Matsumura, H. 1998. “ Formation of Silicon-Based Thin Films Prepared by Catalytic Chemical Vapor Deposition ( Cat-CVD ) Method ” . Jpn. J. Appl. Phys. 37: 3175-3187.

[ 12 ] Matsumura, H. Umemoto, H. Masuda, A. 2004. “ Cat-CVD ( hot-wire CVD ) : How Different from PECVD in Preparing Amorphous Silicon ” . J. Non-Crystalline Solids. 338-340: 19-26.

[ 13 ] Heya, A. Masuda, A. Matsumura, H. 1999. “ Low-Temperature Crystallization of Amorphous Silicon Using Atomic Hydrogenated by Catalytic Reaction on Heated Tungsten ” . Appl. Phys. Lett. 74: 2143-2145.

[ 14 ] Matsumura, H. 1986. “ Catalytic Chemical Vapor Deposition ( CTL-CVD ) Method Producing High Quality Hydrogenated Amorphous Silicon ” . Jpn. J. Appl. Phys. 25: L949-L951

[ 15 ] Chikusa, K. Takemoto, K. Itoh, T. Yoshida, N. Nonomura, S. 2003. “ Preparation of B-Doped a-Si1yxCx: H Films and Heterojunction p-i-n Solar Cells by the Cat-CVD Method ” . Thin Solid Films. 430: 245-248.

[ 16 ] Kaneko, T. Nemoto, D. Horiguchi, A. Miyakawa, N. 2005. “ FTIR Analysis of a-SiC: H Films, Grown by Plasma Enhance CVD ” . J. Crystal Growth. 275: e1097-e1101.

[ 17 ] Nakayama, H. Takatsuji, K. Moriwaki, S. Murakami, K. Mizoguchi, Makayama, M. Miura, Y. 2003. “ Catalytic CVD Growth and Properties of a-C: H and a-C: Nitrogen ” . Thin Solid Films. 430: 309-312.

[ 18 ] Stannowski, B. Rath, J.K. Schropp, R.E.I. 2001. “ Hot-Wire Silicon Nitride for Thin Film Transistors ” . Thin Solid Films. 395: 339-342.

[ 19 ] Saitoh, K. Uchiyama, Y. Abe, K. 2003. “ Preparation of SiO2 Thin Films Using the Cat-CVD Method ” . Thin Solid Films. 430: 287-291.

[ 20 ] Ogita, Y.I. Iehara, S. Tomita, T. 2003. “ Al2O3 Formation on Si by Catalytic Chemical Vapor Deposition ” . Thin Solid Films. 430: 161-164.

[ 21 ] Tamura, K. Kuroki, Y. Yasui, K. Suemitsu, M. Ito, T. Endou, T. Nakazawa, H. Narita, Y. Takata, M. Akahane, T. 2008. “ Growth of GaN on SiC/Si Substrates utilizing

AlN buffer bed by hot-mesh CVD ” . Thin Solid Films. 516: 659-662.

[ 22 ] Yasui, K. Ishibashi, M. Taima, Y. Akahane, T. 2004. “ Hot-Mesh CVD for Growth of GaN movies on ( 100 ) GaAs ” . Thin Solid Films. 464-465: 116-119.

[ 23 ] Yasui, K. Morimoto, K. Akahane, T. 2003. “ Growth of GaN Films on Nitrided GaAs Substrates Using Hot-Wire CVD ” . Thin Solid Films. 430: 174-177.

[ 24 ] Yasui, K. Kanauchi, K. Akahane, T. 2003. “ Growth of c-GaN Movies on GaAs ( 100 ) Using Hot-Wire CVD ” . Thin Solid Films. 430: 178-181.

[ 25 ] Tamura, K. Kuroki, Y. Yasui, K. Suemitsu, M. Ito, T. Endou, T. Nakazawa, H. Narita, Y. Takata, M. Akahane, T. 2008. “ Grwoth of GaN on SiC/Si Substrate utilizing AlN Buffer Layer by Hot-Mesh CVD ” . Thin Solid Films. 516: 659-662.

[ 26 ] Heya, A. He, A.Q. Otsuka, N. Matsumura, H. 1998. “ Anomalous Grain Boundary and Carrier Transport in Cat-CVD poly-Si Films ” . J. Non-Cryst. Solids. 227-230: 1016-1020.

[ 27 ] Nakayama, H. Hata, T. 2006. “ Low-Temperature Growth of Si-Based Organic-Inorganic Hybrid Materials, Si-O-C and Si-N-C, by Organic Cat-CVD ” . Thin Solid Films. 501: 190-194.

[ 28 ] Constant, L. Normand, F.Le. 2008. “ HF CVD Diamond Nucleation and Growth on Polycrystalline Copper: A Kinetic Study ” . Thin Solid Films. 516: 691-695.

[ 29 ] Zimmer, J.W. Chandler, G. Sharda, T. 2008. “ Wide Area Polycrystalline Diamond Coating and Stress Control by sp3 Hot Filament CVD Reactor ” . Thin Solid Films. 516: 696-699.

[ 30 ] Lee, S. Choi, S. Park, K.H. Chae, K.W. Cho, J.B. Ahn, Y. Park, J.Y. Koh, K.H. 2008. “ Hot-Filament CVD Synthesis and Application of Carbon Nanostructures ” . Thin Solid Films. 516: 700-705.

[ 31 ] Shimabukuro, S. Hatakeyama, Y. Takeuchi, M. Itoh, T. Nonomura, S. 2008. “ Effect of Hydrogen Dilution in Preparation of Carbon Nanowall by Hot-Wire CVD ” . Thin Solid Films. 516:710-713.

[ 32 ] Itoh, T. Shimabukuro, S. Kawamura, S. Nonomura, S. 2006. “ Preparation and Electron Field Emission of Carbon Nanowall by Cat-CVD ” . Thin Solid Films. 501: 314-317.

[ 33 ] Lau, K.K.S. Mao, Y. Lewis, H.G.P. Murthy, S.K. Olsen, B.D. Loo, L.S. Gleason, K.K. 2006. “ Polymeric Nanocoatings by Hot-Wire Chemical Vapor Deposition ( HWCVD ) ” . Thin Solid Films. 501: 211-215.

[ 34 ] Komura, Y. Tabata, A. Narita, T. Kondo, A. 2008. “ Influence of gas Pressure on Low-Temperature Preparation and Film Properties of nanocrystalline 3C-SiC Thin Films by HWCVD Using SiH4/CH4/H2 System ” . Thin Solid Films. 516: 633-636.

[ 35 ] Komura, Y. Tabata, A. Narita, Kondo, Mizutani, 2006. “ Nanocrystalline Cubic Silicon Carbide Films Prepared by Hot-Wire Chemical Vapor Deposition Using SiH4/CH4/H2 at a Low Substrate Temperature ” . J. Non-Cryst. Solids. 352: 1367-1370.

[ 36 ] Iida, T. Takamido, Y. Kunii, T. Ogawa, S. Mizuno, K. Narita, T. Yoshida, N. Itoh, T. Nonomura, S. 2008. “ TiO2 Thin Films Using Liquid Materials Prepared by Hot-Wire CVD Method ” . Thin Solid Films. 516: 807-809.

[ 37 ] Yasui, K. Miura, H. Takata, M. Akahane, T. 2008. “ SiCOI Structure Fabricated by Catalytic Chemical Vapor Deposition ” . Thin Solid Films. 516: 644-647.

[ 38 ] Matsumura, H. Ohdaira, K. 2008. “ Recent Situation of Industrial Implementation of Cat-CVD Technology in Japan ” . Thin Solid Films. 516: 537-540.

[ 39 ] Cao, G. 2005. “ Nanostructures and Nanometerials, Synthesis, Properties and Application ” . London. : Imperial College Press.

[ 40 ] Mott, N.F. Davis, E.A. 1971. “ Electronic Procedures in Non-Crystalline Materials ” . Oxford: Clarendon Press.


I'm Niki!

Would you like to get a custom essay? How about receiving a customized one?

Check it out